FDMS86322 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A
* .

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET i.

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